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| CHA5197A RoHS COMPLIANT 21-26.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vd3 Vd4 The CHA5197A is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a Power pHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Performances: 21-26.5GHz 27.5dBm saturated output power 28 dB gain DC power consumption, 550mA @ 6V Chip size: 3.35x1.41x 0.07 mm BCB Layer protection Typical on jig Measurements Main Characteristics Tamb. = 25 C Symbol Fop G P_sat Id Small signal gain Parameter Operating frequency range Min 21 Typ 28 27.5 550 Max 26.5 Unit GHz dB dBm mA Saturated Output power Bias current ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. . DSCHA5197A7173 - 22 Jun 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5197A Electrical Characteristics 21-26.5GHz Medium Power Amplifier Tamb=+25 Vd=6V Id=550mA C, These values are representative of on jig measurements. Symbol Fop G G Is P_sat_1 P_sat_2 PAE NF VSWRin Parameter Operating frequency range Small signal gain Small signal gain flatness Reverse isolation Saturated output power (21-23 GHz) Saturated output power (23-26.5 GHz) Power added efficiency in saturation mode Noise Figure Input VSWR Min 21 Typ Max 26.5 Unit GHz dB dB dB dBm dBm % dB 28 2 40 27 27.5 17 8 3:1 3:1 550 600 6 -0.4 VSWRout Output VSWR Id Id_sat Vd Vg Power Supply @small signal (1) Power Supply @saturation mode Positive drain bias voltage Negative gate bias voltage (2) mA mA V V (1) This parameter is fixed by gate voltage Vg (2) Vg tuned to obtain Id=550mA @Vd=6V and small signal Absolute Maximum Ratings Tamb.=25 (1) C Symbol Vd Id Vg Pin Tch Ta Tstg Parameter Maximum drain bias voltage without RF Maximum drain bias current Gate bias voltage Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 8.0 700 -2.5 to +0.0 10 175 -40 to +80 -55 to +125 Unit V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHA5197A7173 - 22 Jun 07 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5197A 21-26.5GHz Medium Power Amplifier Typical on Jig Measurements Bias conditions: Vd=5V, Vg tuned for Id=500mA Gain and Return Losses versus frequency Output Power versus Frequency and Pin Ref. . DSCHA5197A7173 - 22 Jun 07 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5197A 21-26.5GHz Medium Power Amplifier Gain (dB) @Pin=[-10;-2;+1;+9 dBm] 34 32 30 28 26 Gain (dB) 24 22 20 18 16 14 12 10 21 21,5 22 22,5 23 23,5 24 24,5 25 25,5 26 Frequency (GHz) Gain(dB) @Pin=-10 dBm Gain(dB) @Pin=-2dBm Gain(dB) @Pin=+1dBm Gain(dB) @Pin=+9dBm Power Added efficiency (%) @Pin=[-5;-2;+1;+9 dBm] 20 19 18 17 PAE (%) 16 15 14 13 12 11 10 21 21,5 22 22,5 23 23,5 24 24,5 25 25,5 26 Frequency (GHz) PAE(%) @ Pin=-5 dBm PAE(%) @Pin=-2dBm PAE(%) @Pin=+1dBm PAE(%) @Pin=+9dBm Ref. DSCHA5197A7173 - 22 Jun 07 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5197A 21-26.5GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd1,2,3,4 DC Drain supply feed 10nF 120pF 120pF 120pF 120pF 120pF 120pF 120pF 120pF 10nF To Vg1,2,3,4 DC Gate supply Note: Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Ref. . DSCHA5197A7173 - 22 Jun 07 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5197A 21-26.5GHz Medium Power Amplifier Bonding pad positions. ( Chip thickness : 70m. All dimensions are in micrometers ) Ordering Information Chip form : CHA5197A98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA5197A7173 - 22 Jun 07 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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